| PART |
Description |
Maker |
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| IS45S16800B-7TLA |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| IS42S16800B-7TLI |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| H57V2562GTR-50I H57V2562GTR-50J H57V2562GTR-60I H5 |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| IS43R16320A-6TL IS43R16320A |
32Meg x 16 512-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
| K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
| IS43R16160A-6T IS43R16160A-5T IS43R16160A-5TL IS43 |
16Meg x 16 256-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc
|
| MB84VD22181FM-70PBS MB84VD22191FM-70PBS |
32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM
32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM 32M的（x16）的快闪记忆
|
Spansion Inc.
Spansion, Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
